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this is information on a product in full production. may 2013 docid024645 rev 1 1/21 21 std13nm60nd, stf13nm60nd, STP13NM60ND n-channel 600 v, 0.32 typ., 11 a, fdmesh? ii power mosfet (with fast diode) in dpak, to-220fp and to-220 packages datasheet ? production data figure 1. internal schematic diagram features ? the worldwide best r ds(on) * area among fast recovery diode devices ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. $0y '7$% * 6 to-220fp 1 2 3 tab 1 2 3 dpak to-220 1 3 tab order codes v ds @ t jmax r ds(on) max i d std13nm60nd 650 v 0.38 11 a stf13nm60nd STP13NM60ND table 1. device summary order codes marking package packaging std13nm60nd 13nm60nd dpak tape and reel stf13nm60nd to-220fp tube STP13NM60ND to-220 www.st.com
contents std13nm60nd, stf13nm60nd, STP13NM60ND 2/21 docid024645 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid024645 rev 1 3/21 std13nm60nd, stf13nm60nd, STP13NM60ND electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, to-220 to-220fp v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25c 11 11 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100c 6.93 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25c 109 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/ s, v dd = 80% v (br)dss , v ds(peak) v (br)dss peak diode recovery voltage slope 40 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 40 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s;t c =25c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220fp to-220 r thj-case thermal resistance junction-case max 1.15 5 1.15 c/w r thj-amb thermal resistance junction-amb max 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not- repetitive (1) 1. pulse width limited by tj max 3a e as single pulse avalanche energy (2) 2. starting tj= 25 c, i d =i as , v dd = 50 v 162 mj
electrical characteristics std13nm60nd, stf13nm60nd, STP13NM60ND 4/21 docid024645 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5.5 a 0.32 0.38 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f =1 mhz, v gs = 0 -845- pf c oss output capacitance - 47 - pf c rss reverse transfer capacitance -2.5- pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0v to 480 v - 121 - pf rg gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -4.3- q g total gate charge v dd = 480 v, i d = 11 a v gs = 10 v (see figure 18 ) - 24.5 - nc q gs gate-source charge - 4.8 - nc q gd gate-drain charge - 17 - nc
docid024645 rev 1 5/21 std13nm60nd, stf13nm60nd, STP13NM60ND electrical characteristics table 7. switching times symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd = 300 v, i d = 5.5 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 46.5 - ns t r rise time - 10 - ns t d(off) turn-off delay time - 9.6 - ns t f fall time - 15.4 - ns table 8. source drain diode symbol parameter test conditions min typ max unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs =0 - 1.6 v t rr reverse recovery time i sd =11 a, di/dt =100 a/ s, v dd = 100 v (see figure 19 ) - 150 ns q rr reverse recovery charge - 755 nc i rrm reverse recovery current - 12 a t rr reverse recovery time v dd = 100 v di/dt =100 a/ s, i sd = 11 a tj = 150 c (see figure 19 ) - 187 ns q rr reverse recovery charge - 1271 nc i rrm reverse recovery current - 13.6 a
electrical characteristics std13nm60nd, stf13nm60nd, STP13NM60ND 6/21 docid024645 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15772v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15773v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 01 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15774v1
docid024645 rev 1 7/21 std13nm60nd, stf13nm60nd, STP13NM60ND electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. normalized gate threshold voltage vs. temperature - i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 4v 5v 6v v gs =7, 8, 9, 10v 20 10 25 12 14 16 18 20 22 am15775v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =20v 14 16 10 2 6 10 18 20 22 24 am15776v1 v gs 6 4 2 0 0 q g (nc) (v) 8 8 4 10 v dd =480v 300 200 100 0 400 v ds 12 16 500 v ds (v) i d =11a 20 22 am15779v1 r ds(on) 0.320 0.315 0.310 0.305 0 4 i d (a) ( ) 2 6 0.325 8 10 v gs =10v 0.330 0.335 0.340 am15778v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15780v1 v gs(th) 0.85 0.80 0.75 0.70 t j (c) (norm) -50 0.90 -25 50 100 0.95 0 25 75 125 1.00 1.05 1.10 id=250 a am15777v1
electrical characteristics std13nm60nd, stf13nm60nd, STP13NM60ND 8/21 docid024645 rev 1 figure 14. normalized on-resistance vs temperature figure 15. source-drain diode forward characteristics r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 -50 -25 0 25 i d =11 a 50 75 100 125 1.5 1.7 1.9 2.1 am15782v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.6 0.8 1 t j =-50c t j =150c t j =25c 1.2 am15783v1 figure 16. normalized v ds vs temperature v ds 0.98 0.96 0.94 0.92 t j (c) (norm) -50 1 i d =1ma -25 50 100 1.02 0 25 75 125 1.04 1.06 1.08 am15781v1
docid024645 rev 1 9/21 std13nm60nd, stf13nm60nd, STP13NM60ND test circuits 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std13nm60nd, stf13nm60nd, STP13NM60ND 10/21 docid024645 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024645 rev 1 11/21 std13nm60nd, stf13nm60nd, STP13NM60ND package mechanical data table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data std13nm60nd, stf13nm60nd, STP13NM60ND 12/21 docid024645 rev 1 figure 23. dpak (to-252) drawing 0068772_k
docid024645 rev 1 13/21 std13nm60nd, stf13nm60nd, STP13NM60ND package mechanical data figure 24. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_k
package mechanical data std13nm60nd, stf13nm60nd, STP13NM60ND 14/21 docid024645 rev 1 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024645 rev 1 15/21 std13nm60nd, stf13nm60nd, STP13NM60ND package mechanical data figure 25. to-220fp drawing 7012510_rev_k_b
package mechanical data std13nm60nd, stf13nm60nd, STP13NM60ND 16/21 docid024645 rev 1 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024645 rev 1 17/21 std13nm60nd, stf13nm60nd, STP13NM60ND package mechanical data figure 26. to-220 type a drawing 0015988_typea_rev_s
packaging mechanical data std13nm60nd, stf13nm60nd, STP13NM60ND 18/21 docid024645 rev 1 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
docid024645 rev 1 19/21 std13nm60nd, stf13nm60nd, STP13NM60ND packaging mechanical data figure 27. tape for dpak (to-252) figure 28. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std13nm60nd, stf13nm60nd, STP13NM60ND 20/21 docid024645 rev 1 6 revision history table 13. document revision history date revision changes 15-may-2013 1 first release.
docid024645 rev 1 21/21 std13nm60nd, stf13nm60nd, STP13NM60ND please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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